METHOD FOR PRODUCING HIGH-POWER MICROWAVE TRANSISTORS Russian patent published in 2006 - IPC H01L21/335 

Abstract RU 2285976 C1

FIELD: electronic engineering; high-power microwave transistors and small-scale integrated circuits built around them.

SUBSTANCE: proposed method for producing high-power microwave transistors includes formation of transistor-layout semiconductor wafer on face side, evaporation of metals, application and etching of insulators, electrolytic deposition of gold, formation of grooves on wafer face side beyond transistor layout for specifying transistor chip dimensions, thinning of semiconductor wafer, formation of grooves on wafer underside just under those on face side, formation of through holes for grounding transistor leads, formation of integrated heat sinks for transistor chips around integrated heat sink followed by dividing semiconductor wafer into transistor chips by chemical etching using integrated heat sinks of transistor chips as mask.

EFFECT: enhanced power output due to reduced thermal resistance, enhanced yield, and facilitated manufacture.

2 cl, 1 dwg, 1 tbl

Similar patents RU2285976C1

Title Year Author Number
METHOD FOR UHF HIGH-POWER TRANSISTORS MANUFACTURING 2011
  • Krasnik Valerij Anatol'Evich
  • Snegirev Vladislav Petrovich
  • Zemljakov Valerij Evgen'Evich
  • Antonova Nina Evgen'Evna
  • Shpakov Dmitrij Sergeevich
RU2463683C1
METHOD FOR MANUFACTURING MICROWAVE FIELD-EFFECT TRANSISTOR 2023
  • Markus Dmitrii Vasilevich
  • Krasnik Valerii Anatolevich
  • Rogachev Ilia Aleksandrovich
  • Ignatev Oleg Igorevich
  • Kurochka Aleksandr Sergeevich
RU2806808C1
HIGH-POWER UHF FIELD TRANSISTOR 2011
  • Vorob'Ev Anton Alekseevich
  • Galdetskij Anatolij Vasil'Evich
  • Lapin Vladimir Grigor'Evich
RU2463685C1
MANUFACTURING METHOD OF MICROWAVE TRANSISTOR WITH CONTROL ELECTRODE OF T-SHAPED CONFIGURATION OF SUBMICRON LENGTH 2009
  • Antonova Nina Evgen'Evna
  • Zemljakov Valerij Evgen'Evich
  • Krasnik Valerij Anatol'Evich
  • Snegirev Vladislav Petrovich
RU2390875C1
MODE OF FABRICATION OF SEMICONDUCTOR SHF LIMITER DIODES BY GROUP METHOD 2011
  • Filatov Mikhail Jur'Evich
  • Averkin Sergej Nikolaevich
  • Kolmakova Tamara Pavlovna
RU2452057C1
MICROWAVE INTEGRATED CIRCUIT 2020
  • Nepochatov Yurij Kondratevich
RU2803110C2
PRODUCTION METHOD OF SUPER-HIGH FREQUENCY (SHF) FIELD-EFFECT TRANSISTOR WITH SCHOTTKI BARRIER 2008
  • Lapin Vladimir Grigor'Evich
  • Petrov Konstantin Ignat'Evich
  • Temnov Aleksandr Mikhajlovich
RU2361319C1
POWERFUL MICROWAVE FIELD TRANSISTOR 2022
  • Lapin Vladimir Grigorevich
  • Lukashin Vladimir Mikhailovich
  • Pashkovskii Andrei Borisovich
  • Kulikova Irina Vladimirovna
  • Pristupchik Nikita Konstantinovich
RU2787552C1
METHOD FOR MANUFACTURE OF POWERFUL UHF TRANSISTOR 2011
  • Shpakov Dmitrij Sergeevich
  • Snegirev Vladislav Petrovich
  • Zemljakov Valerij Evgen'Evich
  • Krasnik Valerij Anatol'Evich
RU2485621C1
METHOD TO MANUFACTURE MICROWAVE FIELD TRANSISTOR WITH SCHOTTKY BARRIER 2011
  • Lapin Vladimir Grigor'Evich
  • Petrov Konstantin Ignat'Evich
  • Kuvshinova Natal'Ja Aleksandrovna
RU2465682C1

RU 2 285 976 C1

Authors

Krasnik Valerij Anatol'Evich

Snegirev Vladislav Petrovich

Zemljakov Valerij Evgen'Evich

Antonova Nina Evgen'Evna

Dates

2006-10-20Published

2005-05-06Filed