LASER DIODE Russian patent published in 2023 - IPC H01S5/42 

FIELD: semiconductor lasers.

SUBSTANCE: invention relates to the design of the p-contact of a laser diode chip. A laser diode comprising a semiconductor limited at the ends by mirrors, a p-contact made on the surface of the semiconductor, an n-contact located on the opposite surface of the semiconductor, characterized in that the p-contact is covered with a conductive layer and is equipped with grooves located symmetrically relative to the axis, between with which there is a strip of length L, equipped with surfaces blocking the passage of current, made of a dielectric material located under the conductive layer, lengths a and b along the axis, between which a conductive surface of length c is located, and their values are selected from the condition: 80≤a≤120 mcm and 20≤b≤40 mcm, and the surface blocking the passage of current, length a, is located on the side of the translucent mirror.

EFFECT: reduction in the thermal load on the mirrors, simplification of production and reduction in the number of planar cycle operations.

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