VERTICALLY EMITTING LASER DEVICE Russian patent published in 2024 - IPC H01S5/10 

FIELD: electricity.

SUBSTANCE: invention relates to vertical-emitting laser devices based on heterostructures operating in the infrared range. Vertically emitting laser device includes a silicon substrate on an insulator, to which a laser heterostructure in the form of an upper half of a vertically emitting laser is attached, comprising an active region located between the lower and upper emitter layers, and an upper mirror located above the upper emitter layer, and in the upper silicon layer of the substrate, a lower mirror is formed in the form of a high-contrast diffraction grating. Between the substrate and the lower emitter layer there is at least one non-metallic layer. On both sides of the lower mirror, respectively, in the substrate and in at least one non-metallic layer there are coaxial holes, and the layers between the upper and lower emitter layers are surrounded by an annular air gap coaxial with the hole in the substrate.

EFFECT: higher radiation efficiency and reduced parasitic power losses.

7 cl, 1 dwg