SEMICONDUCTOR STRUCTURE AND METHOD OF ITS MANUFACTURE Russian patent published in 2023 - IPC H10B12/00 

FIELD: microelectronics.

SUBSTANCE: semiconductor structure includes a substrate with a plurality of word line grooves and source/drain regions, each of which is adjacent to each word line groove; a word line disposed in a word line groove and including a first conductive layer, a single connecting layer and a second conductive layer stacked sequentially on each other, where the first conductive layer being located at a lower portion of the word line groove and the word line projection on a side wall of the word line groove, the projection of the source/drain region on the side wall of the word line groove have an overlap region with a predetermined height. In the case of applying a voltage to the word line that is less than the predetermined voltage, the resistance of a single connecting layer exceeds the predetermined resistance, causing the separation of the first conductive layer and the second conductive layer. A method for manufacturing this structure is also proposed.

EFFECT: increasing the excitation current of transistors and reducing the phenomenon of gate-induced drain leakage and, thus, increasing the reliability of the semiconductor structure.

10 cl, 8 dwg