SEMICONDUCTOR STRUCTURE AND METHOD OF ITS MANUFACTURE Russian patent published in 2023 - IPC H01L27/10 

FIELD: semiconductors.

SUBSTANCE: semiconductor structure includes: a semiconductor body including a logic device area and a memory area; a bit line and an electrical contact layer located in the same layer as the bit line, wherein the bit line is located in a memory area and the electrical contact layer is located in a logic device area; a first semiconductor channel located on the surface of the bit line; a second semiconductor channel located in the same layer as the first semiconductor channel and located on the surface of the electrical contact layer; a word line and a gate located in the same layer as the word line; a capacitive structure in contact with a second doping region of the first semiconductor channel; an electrical connection structure in contact with the fourth doping region of the second semiconductor channel; and a dielectric layer located between the bit line and the word line, and also located on the word line side away from the semiconductor substrate.

EFFECT: creation of a semiconductor structure with low power consumption and high performance.

12 cl, 17 dwg