FIELD: typewriters.
SUBSTANCE: semiconductor device is provided. Device comprises: first transistor, which includes the first primary output, the second primary output and the first control output; second transistor, which includes the third primary output, the fourth primary output and the second control output; and resistive element. First and third primary leads are connected to the first voltage line. Second primary output and one output of the resistive element are connected to the second voltage line. First and second control outputs, the fourth primary output and the other output of the resistive element are connected to the node. Potential change in the third primary output is transmitted to the first control output due to capacitive coupling between the third primary output and said node, including the first transistor.
EFFECT: protecting an internal circuit from ESD in a semiconductor device.
27 cl, 6 dwg
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Authors
Dates
2019-02-12—Published
2017-04-06—Filed