SEMICONDUCTOR DEVICE AND SUBSTRATE OF FLUID DISCHARGE HEAD Russian patent published in 2019 - IPC H01L29/66 

Abstract RU 2679650 C2

FIELD: typewriters.

SUBSTANCE: semiconductor device is provided. Device comprises: first transistor, which includes the first primary output, the second primary output and the first control output; second transistor, which includes the third primary output, the fourth primary output and the second control output; and resistive element. First and third primary leads are connected to the first voltage line. Second primary output and one output of the resistive element are connected to the second voltage line. First and second control outputs, the fourth primary output and the other output of the resistive element are connected to the node. Potential change in the third primary output is transmitted to the first control output due to capacitive coupling between the third primary output and said node, including the first transistor.

EFFECT: protecting an internal circuit from ESD in a semiconductor device.

27 cl, 6 dwg

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RU 2 679 650 C2

Authors

Matsumoto, Kohei

Fujii, Kazunari

Dates

2019-02-12Published

2017-04-06Filed