FIELD: semiconductors.
SUBSTANCE: invention relates to devices for producing composite structures with semiconductor substrates under electrothermal action and can be used to create a mechanically strong metal electrode base with single-crystal and porous semiconductor substrates. Heaters and a conductive clamping mechanism 2 are located inside the heating chamber. A vacuum pump, a temperature control module and a pressure control module are connected to the heating chamber. A thermobox for the welded sample is installed in the chamber. The welding process control unit is connected to the clamping mechanism and supplies the connecting voltage. The clamping mechanism is configured for interaction with the thermobox 18 and comprises a metal anchor 16, equipped with a conductive pressure plate 17, and a microscrew 15 connected by means of a spring to the metal anchor.
EFFECT: increase in the uniformity of heating of the samples and the connecting voltage applied to them.
6 cl, 7 dwg
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