FAST RECOVERY DIODE ON SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2024 - IPC H01L29/861 

FIELD: microelectronics.

SUBSTANCE: production of diodes based on silicon-on-insulator (SOI) structures with a submicron thickness of the device layer. A fast recovery SOI diode includes two layers of silicon doped with impurities of different types of conductivity and separated by a barrier layer of silicon oxide, whereas one of the doped silicon layers is formed in the device layer of the “silicon on insulator” structure, then a barrier layer of silicon oxide is made, tunnel-shaped transparent to electrons and opaque to holes, the thickness d of which is determined from the relation , where J is the current density ,ϕ_B is the height of the barrier, m* is the effective mass, h is Planck’s constant, V is the voltage, q is the elementary charge, on the barrier layer of silicon oxide there is a second doped layer of silicon, to which walls of silicon oxide are formed up to the barrier layer.

EFFECT: reduction in the recovery time of the diode, an increase in its performance, as well as an expansion of the scope of application.

1 cl, 2 dwg