METHOD OF CHANGING RADIUS OF PLATE SURFACE CURVATURE Russian patent published in 2024 - IPC H01L21/02 

FIELD: physics.

SUBSTANCE: invention relates to methods of processing semiconductor devices. Method of changing the radius of curvature of the surface of the plate includes deposition and etching of films of different thickness, use of different gas mixtures, calculation of mechanical stresses on the plate in local areas by Stony's formula, comparison of values of mechanical stresses with reference value of mechanical stresses for performance of subsequent technological operations, wherein material coinciding with plate material is deposited, etched, or polished. At that, deposition and etching are performed from front or back side of plate. Curvature is measured from front and back sides.

EFFECT: object of present invention is expansion of technological approaches for changing surface curvature, high accuracy of determining surface curvature, shorter time for carrying out technological processes for changing mechanical stresses.

1 cl, 3 dwg