FIELD: electronic devices. SUBSTANCE: crystal of integral microcircuit is sealed under cap which is made from the same material as crystal of integral microcircuit. Cap is connected to crystal by zone melting with temperature gradient. This is achieved by depositing aluminum layer with width 3 mcm along perimeter of crystal. Then this zone is melt until aluminum appears on outer side of cap. Cap is connected to crystal along its perimeter without seam. EFFECT: increased reliability. 4 dwg
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Authors
Dates
1995-09-10—Published
1985-11-18—Filed