FIELD: semiconductor optoelectronics.
SUBSTANCE: invention relates to semiconductor optoelectronics and can be used to create photoconverters (PC) for laser radiation. Photoconverter of laser radiation based on a photosensitive semiconductor structure with alternating current-carrying strip contacts (3) on a flat front surface includes a device for changing the direction of laser radiation in the form of optical coating (6) applied on antireflection coating (4) and on strip contacts (3), which is transparent for laser radiation. In the front flat surface of optical coating (6) there are V-shaped grooves (8) passing over strip contacts (3) and oriented parallel to strip contacts (3). Projections of V-shaped grooves (8) on the front surface of the photoconverter overlap strip contacts (3), and the sides of V-shaped grooves (8) are inclined at a certain angle to the normal to the front surface of the photoconverter structure with a certain distance H of the bottom of V-shaped grooves (8) to the surface of strip contacts (3) and a certain width of V-shaped grooves (8).
EFFECT: photoconverter according to the invention reduces optical losses for absorption of laser radiation on strip contacts (3), increases efficiency and power of the converted laser radiation.
6 cl, 3 dwg
Title | Year | Author | Number |
---|---|---|---|
PHOTOCELL RECEIVER-CONVERTER OF LASER RADIATION | 2015 |
|
RU2593821C1 |
PHOTOELECTRIC CONVERTER | 2023 |
|
RU2805290C1 |
INTEGRATED SEMICONDUCTOR LASER-AMPLIFIER | 1996 |
|
RU2109381C1 |
SEMICONDUCTOR OPTICAL AMPLIFIER | 1996 |
|
RU2110875C1 |
SEMICONDUCTOR LASER | 1996 |
|
RU2109382C1 |
SEMICONDUCTOR LASER | 2013 |
|
RU2535649C1 |
PHOTOCONVERTER MANUFACTURING METHOD | 2019 |
|
RU2721161C1 |
PHOTOCELL OF SPACE LASER RADIATION DETECTOR-CONVERTER | 2011 |
|
RU2487438C1 |
METHOD FOR MANUFACTURING NANOHETEROSTRUCTURE CHIPS AND ETCHING MEDIUM | 2012 |
|
RU2485628C1 |
METHOD OF MAKING GAAS-BASED PHOTOCELL | 2015 |
|
RU2607734C1 |
Authors
Dates
2024-10-07—Published
2024-07-12—Filed