METHOD OF DETERMINING STANDARD OF TESTING ELECTRONIC PRODUCTS FOR COMPLIANCE WITH REQUIREMENTS FOR RESISTANCE TO DOSE EXPOSURE OF SUPERHARD X-RAY AND GAMMA RADIATION Russian patent published in 2024 - IPC H01L21/66 G01R31/302 

Abstract RU 2828230 C1

FIELD: measuring; electricity.

SUBSTANCE: invention can be used to determine the standard of testing electronic equipment for compliance with requirements for resistance to dose action of superhard X-ray and gamma radiation. Essence of invention consists in the fact that determination of standard of tests of electronic equipment for compliance with requirements of resistance to dose effect of superhard X-ray and gamma-radiation is determined experimentally taking into account coefficient of relative efficiency between radiations of used sources of superhard X-ray radiation and gamma radiation.

EFFECT: providing the possibility of expanding the range of test objects.

1 cl

Similar patents RU2828230C1

Title Year Author Number
METHOD FOR SELECTING PLATES WITH RADIATION-RESISTANT MOS INTEGRATED CIRCUITS 1995
  • Shumilov A.V.
  • Frolov L.N.
  • Fedorovich Ju.V.
RU2082178C1
METHOD TO REJECT CMOS MICROCHIPS MANUFACTURED ON SILICON-ON-INSULATOR STRUCTURES, BY RESISTANCE TO RADIATION EXPOSURE 2009
  • Sinegubko Lev Anatol'Evich
  • Kiselev Nikolaj Nikolaevich
  • Maslov Vjacheslav Viktorovich
  • Jashanin Igor' Borisovich
  • Sogojan Armen Vagoevich
  • Nikiforov Aleksandr Jur'Evich
  • Davydov Georgij Georgievich
  • Telets Vitalij Arsen'Evich
RU2411527C1
METHOD OF SIMULTANEOUS REPRODUCING SPECIFIED NEUTRON FLUENCE VALUES AND EXPOSURE DOSE OF GAMMA-RADIATION IN RESEARCH REACTORS 2016
  • Pikalov Georgij Lvovich
  • Krasnokutskij Igor Sergeevich
  • Kojnov Dmitrij Vasilevich
  • Artamonov Dmitrij Nikolaevich
RU2641890C2
METHOD TO SORT CMOS MICROCIRCUIT CHIPS MANUFACTURED ON SILICON-ON-INSULATOR STRUCTURES BY RADIATION RESISTANCE 2010
  • Jashanin Igor' Borisovich
  • Skobelev Aleksej Vladimirovich
  • Zubarev Maksim Nikolaevich
RU2444742C1
PROCESS OF ACCELERATION TESTING OF ELECTRIC AND RADIO PARTS FOR RESISTANCE TO EFFECTS OF IONIZING RADIATION 1992
  • Makeev S.N.
  • Petrov V.A.
  • Figurov V.S.
RU2036480C1
METHOD FOR PRESORTING OF CMOS CHIPS MADE ON SILICON-ON-INSULATOR STRUCTURES, BY RESISTANCE TO RADIATION EFFECT 2007
  • Sedakov Andrej Julievich
  • Jashanin Igor' Borisovich
  • Skobelev Aleksej Vladimirovich
  • Sogojan Armen Vagoevich
  • Davydov Georgij Georgievich
  • Nikiforov Aleksandr Jur'Evich
  • Telets Vitalij Arsen'Evich
RU2364880C1
METHOD OF REJECTING SEMICONDUCTOR DEVICES FOR RADIATION RESISTANCE 2003
  • Zykov V.M.
  • Junda N.T.
  • Archakov V.G.
  • Sheremet A.V.
RU2253875C2
METHOD OF DETERMINING RESISTANCE OF ELECTRONIC COMPONENTS AND UNITS OF RADIOELECTRONIC EQUIPMENT TO IONISING RADIATION 2012
  • Kachemtsev Aleksandr Nikolaevich
  • Kiselev Vladimir Konstantinovich
  • Korsakova Nadezhda Gennad'Evna
RU2504862C1
METHOD FOR SIMULTANEOUS REPRODUCTION OF GIVEN NEUTRON FLUENCE AND EXPOSURE DOSE OF GAMMA RADIATION AT RESEARCH REACTORS 2018
  • Pikalov Georgij Lvovich
  • Burlaka Igor Andreevich
  • Nikolaev Oleg Aleksandrovich
  • Krasnokutskij Igor Sergeevich
  • Korablev Mikhail Yurevich
RU2686838C1
METHOD OF DETERMINING RESISTANCE TO RADIATION AND TEMPERATURE EFFECTS OF NANOELECTRONIC RESONANT-TUNNELING DIODE (RTD) BASED ON MULTILAYER ALGAAS (ALUMINIUM, GALLIUM, ARSENICUM) SEMICONDUCTOR HETEROSTRUCTURES 2015
  • Meshkov Sergej Anatolevich
  • Makeev Mstislav Olegovich
  • Gudkov Aleksandr Grigorevich
  • Ivanov Yurij Aleksandrovich
  • Ivanov Anton Ivanovich
  • Shashurin Vasilij Dmitrievich
  • Sinyakin Vladimir Yurevich
  • Vyuginov Vladimir Nikolaevich
  • Dobrov Vladimir Anatolevich
  • Usychenko Viktor Georgievich
RU2606174C1

RU 2 828 230 C1

Authors

Danilov Vladimir Pavlovich

Zinovev Denis Vladimirovich

Ulyanenkov Ruslan Vyacheslavovich

Fesik Evgenij Aleksandrovich

Yakunina Olga Sergeevna

Dates

2024-10-08Published

2024-04-10Filed