FIELD: physics.
SUBSTANCE: invention is related to the field of electronic engineering, in particular is intended for presorting of CMOS chips made on silicon-on-insulator structures by radiation resistance. CMOS chips made on silicon-on-insulator structures are radiated in stages with low dose. As criteria parametre that defines radiation resistance of chips, static consumption current is selected. In order to restore initial parametres of chips, they are additionally radiated with grounded terminals.
EFFECT: reduction of time for chips restoration, performance of presorting by single parametre, determination of actual resistance of every specific chip to dose effect of ionising radiation.
1 dwg
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