METHOD TO REJECT CMOS MICROCHIPS MANUFACTURED ON SILICON-ON-INSULATOR STRUCTURES, BY RESISTANCE TO RADIATION EXPOSURE Russian patent published in 2011 - IPC G01R31/28 

FIELD: electricity.

SUBSTANCE: invention is intended to reject CMOS microchips manufactured on silicon-on-insulator structures, by radiation resistance. Method to reject CMOS microchips manufactured on silicon-on-insulator structures, by resistance to radiation exposure consists in stage radiation of microchips with a small dose, selection of static current consumption as criterion parametre, determining radiation resistance of microchips, recovery of initial parametres of microchips by means of their additional radiation with grounded leads. Rejection is carried out in a single stage of radiation at test dose determined by results of radiation of determinant group of microchips from production batch.

EFFECT: reduced dose load at microchip and reduced time of radiation rejection performance by reduction of radiation dose, and also reduction of one of radiation stage with measurement of microchip parametres.

1 dwg