METHOD OF REJECTING SEMICONDUCTOR DEVICES FOR RADIATION RESISTANCE Russian patent published in 2005 - IPC

FIELD: methods of rejecting devices.

SUBSTANCE: criterion parameter of semiconductor devices for "training" sample and for set to be classified is measured before and after the sets are radiated with low dosage of ionizing radiation which doesn't cause significant structural formation of defects. Resistance of devices is defined on the base of measured values of the parameter and radiation tests of "training" sample. Radiation resistance of any device is determined by using approximation of dosage dependence of criterion parameter by system of algebraic equations on the base of multi-parameter mathematical model with two independent parameters. Functional relationships between mutually dependent parameters of the model are determined by means of measurement of dosage dependence of criterion parameter for devices from "training" sample and two independent parameters of mathematical model are determined for any device from the value of criterion parameter of the device which has to be measured before and after the device is radiated with low dosage of ionizing radiation. Mathematical model of dosage dependence of criterion parameter is presented in form of polynomial with the degree being no lower than two taken from logarithm of radiation dosage. Functional dependences of mutually dependent parameters of the polynomial are built on the base of linear regression according to results of test of "training" sample of devices.

EFFECT: higher truth and precision of rejection at minimal number of devices in "training" sample: preserved radiation resource during process of rejection.

3 cl, 12 dwg