METHOD OF CREATING REGULAR SYMMETRIC NANOSIZED RECESSES ON SURFACE OF SEMICONDUCTOR SUBSTRATE Russian patent published in 2024 - IPC H01L21/3065 H01L21/324 H01L31/18 B82Y40/00 

FIELD: electronics; optoelectronics.

SUBSTANCE: invention relates to electronics and optoelectronics and can be used in designing structures of active elements of nano- and optoelectronics and integrated circuits based thereon. Method of creating regular symmetric nano-sized recesses on the surface of a semiconductor substrate consists in the fact that on the semiconductor substrate by the method of focused ion beams primary nanosized recesses are formed, then performing high-temperature annealing of the semiconductor substrate with the primary nanosized recesses, during which the formed primary nanosized recesses acquire a symmetric pyramid shape, faceted by crystallographic planes with one vertex, and radiation defects generated by the focused ion beam in the semiconductor substrate are eliminated and the crystalline structure of the substrate material is restored in the region of the nanosized recesses.

EFFECT: invention enables to form regular symmetric faceted by crystallographic planes nanosized recesses in the form of a pyramid, having one vertex, which acts as a single nucleation centre, which further uniquely sets the position of the formation point and contributes to the production of reproducible and homogeneous self-organizing nanostructures in them without the need to use mask layers and other lithographic operations.

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