METHOD OF MAKING MICROELECTRONIC DEVICES Russian patent published in 2024 - IPC H01L21/56 

Abstract RU 2832687 C1

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used to make semiconductor devices and integrated microcircuits with high load capacity, which is achieved due to the possibility of reliable adjoining of the external cooler to the heat-generating part of the device housing. Method of semiconductor devices and integrated circuits manufacturing involves placing on a pedestal a base with electronic components installed on it, application of a sealing compound, which covers the base with electronic components installed on it, polymerisation of the sealing compound and removing the housing formed by the polymerised compound and the base from the pedestal, according to the invention, the area of the pedestal is larger than the area of the base with the electronic components installed on it, wherein pedestal surface has anti-adhesion properties to applied sealing compound, which, spreading over the surface of the base and the free surface of the pedestal, is kept within pedestal by surface tension forces.

EFFECT: invention ensures reduction of the device housing sagging during polymerisation of the sealing compound applied by the free pouring method on the thin base.

1 cl, 1 dwg

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RU 2 832 687 C1

Authors

Baranovskij Dmitrij Moiseevich

Dates

2024-12-27Published

2024-05-20Filed