METHOD OF CUTTING VOLUMETRIC SILICON CARBIDE MONOCRYSTALS WITH DIAMOND WIRE Russian patent published in 2025 - IPC C30B29/36 

FIELD: semiconductor equipment.

SUBSTANCE: proposed method of cutting volumetric monocrystals of silicon carbide with diameter of 6 inches on a diamond wire cutting machine consists in using a diamond cutting wire with diameter of 210 mcm to 250 mcm, with a set wire tension during cutting of 30-45 N, using high-speed back-and-forth motion of diamond cutting wire for cutting of monocrystalline crystal of silicon carbide, with average cutting speed of 0.09-0.17 mm/min. In order to reduce the effect of wire withdrawal when cutting zones of the crystal, which contain a large number of internal stresses, which contribute to an increase in the buckling of the silicon carbide plates after cutting, the silicon carbide crystal is glued with ceramic linings. Thickness of plates at selection of cutting pitch can be 430-730 mcm.

EFFECT: improving the quality of cut plates due to the fact that when cutting crystal zones that usually have large values of buckling and thickness variation after cutting, in these zones the linings are also cut, which help to keep the wire from moving away from the cutting plane.

4 cl, 2 dwg, 4 ex