FIELD: chemistry.
SUBSTANCE: invention can be used in the technology of making microfluidic devices. Proposed method includes plasma-chemical treatment of silicon surface in plasma Ar:O2:CF4 in ratio of gas mixture 2:4:3, after which the silicon wafer is treated in a solution of hydrofluoric acid and water in ratio of 1:50, buffered with ammonium fluoride, until rolling, further, silicon wafer is washed in deionised water from buffer solution residues and silicon wafer is dried in inert medium, in parallel, the glass substrate is washed in a dimethylformamide solution, the glass substrate is washed from residues of dimethylformamide in deionised water and dried with a nitrogen gun.
EFFECT: invention provides improved reliability of glass and silicon connection obtained by means of anode bonding process.
1 cl, 2 dwg
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