METHOD FOR PRELIMINARY PREPARATION OF SURFACE OF SILICON SUBSTRATE FOR TECHNOLOGICAL PROCESSES Russian patent published in 2018 - IPC H01L21/306 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the methods of processing of semiconductor devices or parts thereof and can be used for preliminary preparation of the surface of the silicon substrate for technological processes. In the method of preliminary preparation of the surface of a silicon substrate for technological processes, the cleaning of the surface of the silicon substrate from organic contaminants is carried out with dimethylformamide. Further, the oxide film from the surface of the silicon substrate is removed by immersing the silicon substrate in an aqueous solution of hydrofluoric acid (HF) with a molar concentration of 0.05–0.09 mol/l, after which the surface of the silicon substrate is washed in isopropyl alcohol C₃H₈O with a molar concentration of 0.01–0.0125 mol/l. Further, the surface of the purified silicon substrate is coated with 40±5 % rosin solution in isopropyl alcohol by centrifugation, as a result of which a passivating film is formed on the surface of the silicon substrate.

EFFECT: technical result of the invention consists in obtaining a clean and oxidation-stable surface of a silicon substrate with no hydroxyl groups.

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