FIELD: microelectronics.
SUBSTANCE: invention relates to microelectronics and can be used in designing integrated circuits with controlled stabilization voltage. In the bulk silicon Zener diode, which includes an anode, a cathode, contacts, a silicon layer doped with conductivity type 1 impurity is made on the bulk silicon plate, connected to the anode, on which a silicon region doped with conductivity type 2 impurity is formed, part of which is connected to cathode adjacent to anode, and the other part is connected to an additional region of the Zener diode, which is a region of silicon doped with conductivity type 1 impurity, to which a contact is made.
EFFECT: possibility of operating voltage control in conditions of external factors, expansion of application area.
1 cl, 5 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODE ON "SILICON ON INSULATOR" STRUCTURE | 2022 |
|
RU2788587C1 |
| ZENER DIODE ON A SILICON-ON-INSULATOR STRUCTURE | 2021 |
|
RU2783629C1 |
| PHOTODIODES AND MANUFACTURE THEREOF | 2008 |
|
RU2468474C2 |
| METHOD FOR MANUFACTURING A LATERAL DMOS TRANSISTOR WITH AN INCREASED BREAKDOWN VOLTAGE | 2023 |
|
RU2803252C1 |
| FAST RECOVERY DIODE ON SILICON-ON-INSULATOR STRUCTURE | 2023 |
|
RU2811452C1 |
| METHOD TO MAKE HIGH VOLTAGE SILICON-CARBIDE DIODE BASED ON ION-DOPED P-N-STRUCTURES | 2013 |
|
RU2528554C1 |
| THYRISTOR TRIODE-THYROID | 2005 |
|
RU2306632C1 |
| CAPACITIVE MOS DIODE CELL OF PHOTODETECTOR-RADIATION DETECTOR | 2014 |
|
RU2583955C1 |
| PROCESS OF MANUFACTURE OF INTEGRAL STABILIZER DIODE | 0 |
|
SU1814107A1 |
| METHOD OF MAKING SELF-ALIGNED HIGH-VOLTAGE INTEGRATED TRANSISTOR | 2012 |
|
RU2492546C1 |
