BULK SILICON ZENER DIODE Russian patent published in 2025 - IPC H10D8/25 

Abstract RU 2837780 C1

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used in designing integrated circuits with controlled stabilization voltage. In the bulk silicon Zener diode, which includes an anode, a cathode, contacts, a silicon layer doped with conductivity type 1 impurity is made on the bulk silicon plate, connected to the anode, on which a silicon region doped with conductivity type 2 impurity is formed, part of which is connected to cathode adjacent to anode, and the other part is connected to an additional region of the Zener diode, which is a region of silicon doped with conductivity type 1 impurity, to which a contact is made.

EFFECT: possibility of operating voltage control in conditions of external factors, expansion of application area.

1 cl, 5 dwg

Similar patents RU2837780C1

Title Year Author Number
NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODE ON "SILICON ON INSULATOR" STRUCTURE 2022
  • Shobolova Tamara Aleksandrovna
  • Shobolov Evgenij Lvovich
  • Surodin Sergej Ivanovich
  • Gerasimov Vladimir Aleksandrovich
  • Boryakov Aleksej Vladimirovich
  • Trushin Sergej Aleksandrovich
RU2788587C1
ZENER DIODE ON A SILICON-ON-INSULATOR STRUCTURE 2021
  • Shobolova Tamara Aleksandrovna
  • Shobolov Evgenij Lvovich
  • Surodin Sergej Ivanovich
  • Gerasimov Vladimir Aleksandrovich
  • Boryakov Aleksej Vladimirovich
RU2783629C1
PHOTODIODES AND MANUFACTURE THEREOF 2008
  • Frakh Tomas
RU2468474C2
METHOD FOR MANUFACTURING A LATERAL DMOS TRANSISTOR WITH AN INCREASED BREAKDOWN VOLTAGE 2023
  • Shobolova Tamara Aleksandrovna
  • Shobolov Evgenij Lvovich
  • Mokeev Aleksandr Sergeevich
  • Gerasimov Vladimir Aleksandrovich
  • Serov Sergej Dmitrievich
  • Trushin Sergej Aleksandrovich
  • Kuznetsov Sergej Nikolaevich
  • Surodin Sergej Ivanovich
  • Rudakov Sergej Dmitrievich
RU2803252C1
FAST RECOVERY DIODE ON SILICON-ON-INSULATOR STRUCTURE 2023
  • Shobolova Tamara Aleksandrovna
  • Shobolov Evgenij Lvovich
  • Angel Maksim Nikolaevich
  • Gerasimov Vladimir Aleksandrovich
  • Trushin Sergej Aleksandrovich
  • Mokeev Aleksandr Sergeevich
  • Serov Sergej Dmitrievich
  • Kuznetsov Sergej Nikolaevich
  • Rudakov Sergej Dmitrievich
RU2811452C1
METHOD TO MAKE HIGH VOLTAGE SILICON-CARBIDE DIODE BASED ON ION-DOPED P-N-STRUCTURES 2013
  • Ryzhuk Roman Valerievich
  • Kargin Nikolaj Ivanovich
  • Gudkov Vladimir Alekseevich
  • Gusev Aleksandr Sergeevich
  • Ryndja Sergej Mikhajlovich
RU2528554C1
THYRISTOR TRIODE-THYROID 2005
  • Tikhonov Robert Dmitrievich
  • Krasjukov Anton Jur'Evich
RU2306632C1
CAPACITIVE MOS DIODE CELL OF PHOTODETECTOR-RADIATION DETECTOR 2014
  • Legotin Sergej Aleksandrovich
  • Murashev Viktor Nikolaevich
RU2583955C1
PROCESS OF MANUFACTURE OF INTEGRAL STABILIZER DIODE 0
  • Bryukhno Nikolaj Aleksandrovich
  • Lebedev Aleksandr Sadofevich
  • Fakhurtdinov Yurij Yakubovich
SU1814107A1
METHOD OF MAKING SELF-ALIGNED HIGH-VOLTAGE INTEGRATED TRANSISTOR 2012
  • Manzha Nikolaj Mikhajlovich
  • Rygalin Boris Nikolaevich
  • Pustovit Viktor Jur'Evich
RU2492546C1

RU 2 837 780 C1

Authors

Shobolova Tamara Aleksandrovna

Shobolov Evgenij Lvovich

Mokeev Aleksandr Sergeevich

Gerasimov Vladimir Aleksandrovich

Kuznetsov Sergej Nikolaevich

Surodin Sergej Ivanovich

Rudakov Sergej Dmitrievich

Angel Maksim Nikolaevich

Dates

2025-04-04Published

2024-06-17Filed