FIELD: microelectronics.
SUBSTANCE: invention relates to microelectronics and can be used in designing integrated circuits with controlled stabilization voltage. In the bulk silicon Zener diode, which includes an anode, a cathode, contacts, a silicon layer doped with conductivity type 1 impurity is made on the bulk silicon plate, connected to the anode, on which a silicon region doped with conductivity type 2 impurity is formed, part of which is connected to cathode adjacent to anode, and the other part is connected to an additional region of the Zener diode, which is a region of silicon doped with conductivity type 1 impurity, to which a contact is made.
EFFECT: possibility of operating voltage control in conditions of external factors, expansion of application area.
1 cl, 5 dwg
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Authors
Dates
2025-04-04—Published
2024-06-17—Filed