PROCESS OF DOPING OF SEMICONDUCTORS Russian patent published in 1994 - IPC

Abstract RU 2008742 C1

FIELD: manufacture of semiconductor devices. SUBSTANCE: alloying composition is deposited on surface of semiconductor substrate. Manufactured structure is put into magnetic field and is exposed to light radiation with power density which does not cause melting of surface of structure. EFFECT: facilitated manufacture, reduced manufacturing cost. 4 dwg

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RU 2 008 742 C1

Authors

Rykov V.V.

Kabeshov A.V.

Rykova T.S.

Akashkin A.S.

Dates

1994-02-28Published

1991-03-04Filed