MICROWAVE INTEGRATED CIRCUIT MANUFACTURING METHOD Russian patent published in 2025 - IPC H10D84/01 

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering and can be used in designing hybrid integrated circuits for the microwave range. Method for manufacturing a microwave integrated circuit includes making a multilayer dielectric substrate with a predetermined sequence of dielectric layers, application of topological pattern on each of separate dielectric layers, formation of multilayer dielectric substrate given sequence with simultaneous alignment of their through holes, subsequent sintering, before applying a topological pattern, each of the layers made from unfired ceramic is subjected to spot heat treatment to form sintered areas on the entire thickness of the sheet in form of a grid with lines whose width is equal to the thickness of the sheet, with grid cell size equal to 1/10 of the corresponding side of the microcircuit chip.

EFFECT: reduced shrinkage of ceramic sheets in the plane of the sheets.

1 cl, 1 dwg