METHOD OF THINNING PHOTOSENSITIVE LAYER OF MATRIX PHOTODETECTOR Russian patent published in 2014 - IPC H01L21/04 

FIELD: chemistry.

SUBSTANCE: application: for manufacturing semiconductor photodetectors and for manufacturing multielment photodetectors of different purpose. Essence of invention consists in the following: photosensitive element with "thick" base region is thinned to required thickness (10-15 mcm) by precision defect-free methods: abrasion-free chemicomechanical polishing with application of spherical polishing disc instead of flat one to obtain specified surface concavity and chemicodynamical polishing to final thickness, in which compensation of concavity, obtained at AFCMP stage with formation of non-flatness of surface with size of MPD of approximately 10 mm not worse than ±2 mcm.

EFFECT: providing possibility of thinning base region of photosensitive element with obtaining required flatness.

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