FIELD: semiconductor engineering. SUBSTANCE: method depends on building test structure in the form of metallization track on semiconductor plate with contact pads, and passing current through test structure by means of probes held tight against contact pads; novelty is that passed through test structure is current pulse of rise time not over 1 mcs amplitude ensuring destruction of faultless test structure in static conditions; time from beginning of current pulse arrival to moment of destruction of test structure is recorded, and this time is used as indication of quality of semiconductor plate metallization. EFFECT: improved quality control capacity and percentage of yield.
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