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1 316 488

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A1

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IPC

(21) (22)

Application

3922486/25, 1985-07-04

(22)

Actual filing date

1985-07-04

(45)

Published

1995-12-27

(72)

Inventor

Avdeev I.I.Gantman I.Ja.Kolmakova T.P.Matveev Ju.A.Pashchenko P.B.

METHOD OF MANUFACTURE OF LOCAL EPITAXIAL GaAs STRUCTURES Russian patent published in 1995 - IPC

Abstract SU 1316488 A1

FIELD: electronics. SUBSTANCE: given method is recommended for epitaxial growth of depressions in GaAs substrate. Masking coat with windows under depressions is deposited on substrate. Local etching of depressions in liquid polishing etching agent is performed. Masking coat is removed. Sample is irradiated with protons with dose 6-12 mC/sq.cm. Growth of depressions is conducted under input pressure of trichloride arsenic 20-66 Pa. EFFECT: improved quality of epitaxial structures thanks to reduced value of transition layer. 3 tbl

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SU 1 316 488 A1

Authors

Avdeev I.I.

Gantman I.Ja.

Kolmakova T.P.

Matveev Ju.A.

Pashchenko P.B.

Dates

1995-12-27—Published

1985-07-04—Filed

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