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1 480 683

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A1

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IPC

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Application

4276978/25, 1987-07-06

(22)

Actual filing date

1987-07-06

(45)

Published

1994-02-15

(72)

Inventor

Prokof'Ev S.P.Uritskij V.Ja.Shatalov V.F.

PROCESS OF MANUFACTURE OF SILICON STRUCTURES WITH DIELECTRIC INSULATION OF COMPONENTS OF INTEGRATED CIRCUITS Russian patent published in 1994 - IPC

Abstract SU 1480683 A1

FIELD: microelectronics. SUBSTANCE: in silicon substrate pattern is formed by etching. Layer of insulating silicon oxide is formed on pattern. Layer of polysilicon 0.5-2.0 μm thick doped with boron with concentration 1017-2·1020cm-3 is deposited on it. After this bearing layer of polysilicon is grown and part of substrate is taken off with opening of monosilicon sections. EFFECT: improved electrical characteristics of integrated circuits due to decrease and stabilization of charge in layer of insulating silicon oxide. 1 tbl

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SU 1 480 683 A1

Authors

Prokof'Ev S.P.

Uritskij V.Ja.

Shatalov V.F.

Dates

1994-02-15—Published

1987-07-06—Filed

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