METHOD FOR TESTING MICROWAVE FIELD-EFFECT TRANSISTORS ON BOARD Russian patent published in 1995 - IPC

FIELD: instruments. SUBSTANCE: method involves application of direct voltage to drain and source electrodes, recording of microwave current amplified by transistor, judgment of quality of field-effect transistor by level of microwave current. Goal of invention is achieved by excitation of microwave current in field- effect transistor. The current is excited by illumination of gate area by microwave signal which intensity was modulated. Recording of output signal is made by crystal that has electric response to illumination, output signal is recorded by measuring amplitude of light beam divergence that is reflected from lower boundary of crystal. EFFECT: increased efficiency and increased frequency band. 1 dwg