FIELD: electronics. SUBSTANCE: in compliance with given method GaAs layer is treated in etching agent with following quantitative proportion of ingredients, volume parts: caustic ammonia 1; hydrogen peroxide 350-500. Then Ga1-xAlxAs layer is locally treated in concentrated hydrofluoric acid. Treatments are conducted at room temperature for the course of (1,05-1,10)τ, where t is time of removal of layer. Method is simple in realization. High precision of method makes it possible to measure thicknesses of both submicron and hyperfine layers. In this case limitations of ultimate content of aluminium are diminished independent of orientation of used substrate. EFFECT: increased precision of determination of thicknesses of GaAs and GaxAl1-xAs layers where x ≥ 0,1 0.1. 1 tbl
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