FIELD: semiconductor engineering. SUBSTANCE: in multilayer electrode structure contact windows to electrodes to each overlying layer are made in the sections that are free of electrodes of the underlying layer, the distance between the projection of the contact window to the underlying layer and the nearest electrode of this layer is selected proceeding from the thickness of the dielectric layer in which the window is etched, average size of the grain in the polysilicon layer, and allowable contact resistance of the aluminium-polysilicon contact. EFFECT: decreased probability of short-circuit fault between electrodes of different polysilicon layers. 1 dwg
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