PROCESS OF MANUFACTURE OF HETEROEPITAXIAL SILICON STRUCTURES ON SAPPHIRE Russian patent published in 1996 - IPC

Abstract SU 1586457 A1

FIELD: semiconductor technology. SUBSTANCE: invention can be used in electronics in manufacture of semiconductor devices. Sapphire substrate is placed on molybdenum pedestal in vacuum chamber. Partially ionized flow of silicon is formed, substrate is heated and ion etching is performed. Then etching is stopped, temperature is decreased, energy of ions and ionization degree are diminished and epitaxial growth is conducted with certain rate. EFFECT: increased quality of heteroepitaxial structures thanks to improvement of crystalline structure of epitaxial layer. 1 tbl

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SU 1 586 457 A1

Authors

Ljutovich A.S.

Ashurov Kh.B.

Khikmatillaev M.Kh.

Kulagina L.V.

Dates

1996-04-27—Published

1988-08-10—Filed