METHOD FOR OBTAINING HETEROEPITAXIAL SILICON-ON-SAPPHIRE STRUCTURES Russian patent published in 2010 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: invention can be used in electronic equipment during manufacture of semiconductor devices. Method for obtaining heteroepitaxial silicon-on-sapphire structures involves obtaining semi-finished product of silicon-on-sapphire structure, amorphisation of the obtained structure by means of implantation of ions keeping electrophysical properties of silicon layer and then high-temperature treatment. In addition, implantation is performed with hydrogen ions or its compounds with ions of elements maintaining electrophysical properties of silicon layer. Amorphisation can be performed first either with silicon ions, and then with hydrogen ions, or first with hydrogen ions, and then with silicon ions, or only with ions of hydrogen compound with elements maintaining electrophysical properties of silicon layer.

EFFECT: development of method for obtaining heteroepitaxial silicon-on-sapphire structures, which allows obtaining recrystallised layer with improved properties at reducing the power and dose of implantation ions maintaining electrophysical properties of silicon layer.

4 cl, 3 ex