METHOD OF PRODUCING MULTILAYER EPITAXIAL P-I-N STRUCTURE BASED ON GaAs-GaAlAs COMPOUNDS BY METHOD OF LIQUID-PHASE EPITAXY Russian patent published in 2018 - IPC H01L21/208 

FIELD: chemistry.

SUBSTANCE: invention refers to the technology of multilayer semiconductor structures of compounds A³B⁵ by the method of liquid-phase epitaxy, and more particularly to methods of manufacturing semiconductor p-i-n structures in the system GaAs-GaAlAs for power electronic equipment. When the structure is grown to the temperature range of inversion of the silicon impurity in gallium arsenide of 885-895°C, the epitaxial process is carried out in an atmosphere of high-purity inert gas, and then to the temperature of the epitaxy termination - in an atmosphere of high-purity hydrogen.

EFFECT: increase in the values of the reverse breakdown voltage simultaneously with the elimination of thyristor regions on the current-voltage characteristics of the structures obtained.

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