METHOD OF MANUFACTURE OF MICROCIRCUITS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: for manufacture of microcircuits diffusion regions of p-type with depth x_p are formed in semiconductor silicon substrate of n-type of conduction. Then grooves x_k deep isolating these regions are created as well as regions of n-type in substrate. Dielectric film is grown and polysilicon is deposited on surface of grooves. Manufactured structure is tapered off by removal of material of substrate to opening of isolated pockets. Isolated pockets containing p-type regions are diffused with p-type dope to depth of x. Transistor structures of n-p-n type are formed in n-type pockets, p-n-p structures with depth x_δ of base regions are formed in p-type pockets. Dimensional parameters of diffusion regions of p-n-p transistors should satisfy relation x_k-x≅x_p≅x_k-x_δ. This results in stable and increased values of breakdown voltages between collectors and emitters of transistors as well as their gain factor. EFFECT: raised output of good microcircuits thanks to increase of reproduction of parameters of distribution of dope in p-n-p transistor structures. 4 dwg