FIELD: electricity.
SUBSTANCE: in microprofile, including film elements of working topology arranged at the distance from each other (with a gap), coupled with surface of dielectric carrier, there is a through microcavity arranged symmetrically and coupled with working topology, to produce hanging edges of film elements of working topology and blunt angle of specified value, between them and walls of microcavity. Substance of microprofile manufacturing method consists in the fact that, using method of selective etching, through microcavity is arranged in dielectric carrier, starting its formation from the side, which is opposite to side coupled with working topology, and going on to form hanging edges of film elements above it and blunt angle between them and walls of microcavity.
EFFECT: reduced losses of microwave energy, increased level of integration.
2 cl, 7 dwg, 2 tbl
