MICROPROFILE OF STRUCTURE OF VACUUM INTEGRAL MICROWAVE CIRCUIT AND METHOD OF ITS MANUFACTURING Russian patent published in 2013 - IPC H01J19/64 

FIELD: electrical engineering.

SUBSTANCE: invention may be used in production of electrovacuum microunits with vacuum integral circuits (ICs) when the necessity is in place to transmit electromagnetic energy from one layer of the 3D scheme onto another and vice versa. In the microprofile of the vacuum integral microwave circuit contains film working topology elements, positioned at a distance from each other and conjugated with the surface of the dielectric carrier wherein a microcavity is arranged, symmetrically matching the working topology, so that to form over it overhanging brims of the film working topology elements and an angle between them and the generatrix walls of the microcavity that is through, with an angle between its generatrix walls and the overhanging brims of the film working topology elements, the latter having a vertical bend between the surface of the dielectric carrier of the film working topology elements and the facet of the through cavity that is conic-shaped thus forming the twisted wall of the dielectric carrier microprofile within the microprofile edge section, angle β' between the microprofile generatrix and twisted walls and the strip line overhanging it varying within the following range: 135°<β'≤150°.

EFFECT: ensuring interlayer transitions, reducing electromagnetic energy losses, integrity propagation along the third coordinate through layer-by-layer positioning of active topological structures.

2 cl, 14 dwg, 1 tbl