METHOD FOR PRODUCING CAPACITOR PLATE FROM POLYCRYSTALLINE SILICON Russian patent published in 1996 - IPC

FIELD: microelectronics; semiconductor memory circuits built around MIS transistors. SUBSTANCE: insulating layer is formed on superconducting substrate surface, protective coat is deposited, contact cut is made in protective coating and in insulating layer to substrate, polycrystalline silicon layer is evaporated, plate is formed by etching evaporated layer through photoresist mask, auxiliary layer is applied contact cut in it is opened with vertical walls to plate, then additional layer of polycrystalline silicon is evaporated, after which wall projections are produced by mask-free anisotropic plasma etching of additional layer on plate surface in contact cut of auxiliary layer, and finally auxiliary layer is removed from plate surface. EFFECT: improved efficiency of plate surface without enlarging its size due to developing its profile. 5 dwg