FIELD: integrated circuits production. SUBSTANCE: lower level conductors are formed, as well as interlevel insulation by means of application of the first dielectric layer with thickness being equal to 0.6-0.8 thickness of interlevel insulation. Relief is smoothed over by magnetron sputtering this layer by argon at power of 0,7-3 Wt/cm2 and pressure of 1-4·10-1Pа and magnetic field strength being equal to 50-300 H for thickness being equal to 0.10-0.2 thickness of interlevel insulation. Then the second dielectric layer is applied. Interlevel windows are opened and top level conductors are formed. EFFECT: improved reliability; improved output. 5 dwg
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