FIELD: protective coatings. SUBSTANCE: invention relates to a method of formation of silicon dioxide films including blowing through of reactor with oxygen and deposition of silicon dioxide film from silicon compound-containing gas phase onto silicon carriers at 650-770 C under reduced pressure. Defectiveness of the film is lowered when reactor is blown through with oxygen mixed with 2-6 vol % of ozone under 5-60 Pa pressure for 3-10 min. EFFECT: improved quality of films.
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