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1 825 234

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A1

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IPC

(21) (22)

Application

4875598/25, 1990-10-22

(22)

Actual filing date

1990-10-22

(45)

Published

1995-03-27

(72)

Inventor

Voronin V.A.Guba S.K.Plakhotnaja L.S.

PROCESS OF MANUFACTURE OF GALLIUM ARSENIDE STRUCTURES FOR INTEGRATED CIRCUITS ON BASE OF SCHOTTKY FIELD-EFFECT TRANSISTORS Russian patent published in 1995 - IPC

Abstract SU 1825234 A1

FIELD: SHF devices. SUBSTANCE: buffer layer is formed on gallium arsenide substrate by three-four times repeated successive growth of undoped regions, each being composed of two sublayers with concentration of deep levels E12n1= 1012 cm-2 and n2= 1014. EFFECT: facilitated manufacture. 1 tbl

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SU 1 825 234 A1

Authors

Voronin V.A.

Guba S.K.

Plakhotnaja L.S.

Dates

1995-03-27—Published

1990-10-22—Filed

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