SEMICONDUCTOR DEVICE Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: expanded functional capabilities of semiconductor device are obtained thanks to provision of controlled switching-over of device from low-resistance state to one of higher-resistance states with passing of current having value exceeding threshold magnitude, thanks to provision of capability of recording and storage of information on value and polarity of voltage applied to device under recording, thanks to provision of continuous registration of radiation absorbed by device. Semiconductor device has semi-insulating backing based on compound A³B³ doped with compensating impurity with deep level of concentration within interval 5·10¹⁵-5·10¹⁶cm³.. Semiconductor film made of compound A³B³ is placed on backing with two ohmic contacts. Value of product of thickness of film by concentration of electrons in it lies within interval 5·10¹⁰-10¹²cm^-2.. EFFECT: expanded functional capabilities. 3 cl, 2 dwg