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1 774 673

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IPC

(21) (22)

Application

4769581/26, 1989-10-30

(22)

Actual filing date

1989-10-30

(45)

Published

1994-09-30

(72)

Inventor

Dolginov L.М.Мal'Kova N.V.Мil'Vidskij М.G.Рshenichnaja А.N.Solov'Eva Е.V.Gogoladze D.Т.

METHOD OF PREPARING OF C-STRUCTURE Russian patent published in 1994 - IPC

Abstract SU 1774673 A1

FIELD: semiconducting technology, photodetectors. SUBSTANCE: C-structure is prepared by method of liquid-phase epitaxy. Firstly, backing InP is annealed at 300 ± 10 C, then - at temperature above or equal epitaxy temperature under protective plate InP. Epitaxy process is carried out at 710 + 10 C. Layers of the general formula Jn_0,53Ga_0,47As are obtained with carrier concentration n < 1·10¹⁵ cm^-3 showing increased photosensitivity at spectral range 1.85-2.1 microns. EFFECT: improved method of structure making. 2 cl, 3 ex, 1 dwg

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SU 1 774 673 A1

Authors

Dolginov L.М.

Мal'Kova N.V.

Мil'Vidskij М.G.

Рshenichnaja А.N.

Solov'Eva Е.V.

Gogoladze D.Т.

Dates

1994-09-30—Published

1989-10-30—Filed