FIELD: microelectronics; production of semiconductor devices and integrated circuits. SUBSTANCE: interconnection has a contact-barrier conducting layer adjacent to active components in the bulk of silicon substrate, lower interconnection level, interlevel dielectric layer, and upper interconnection level. The levels are made of aluminium or aluminium alloy. A layer of conducting material, such as tantalum nitride, titanium nitride, hafnium nitride with a thickness of 0.05 - 0.15 mcm or ruthenium oxide, iridium oxide, osmium oxide with a thickness of 0.07 - 0.15 mcm, is formed on the surface of the lower interconnection level. EFFECT: improved contact between interconnection levels; lower probability of short circuits; enhanced resistance to electromigration. 1 dwg, 1 tbl
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