METHOD OF PLASMA ETCHING OF ALUMINIUM Russian patent published in 1996 - IPC

FIELD: electronic technique, namely production of integrated circuits, procession of objects, coated by films, treatment of heavy aluminium parts. SUBSTANCE: method comprises steps of moving a discharge, had been created by direct current pulses, by action of superhigh frequency field relative to a surface of an object to be etched; creating the pulse discharge at one side of the object and applying an energy of superhigh frequency field at an opposite side and then vice versa in such a way, that to provide displacement of the discharge forwards and backwards relative to the object being etched; performing the etching process at atmospheric pressure or a pressure, being near to it. EFFECT: increased rate and enhanced uniformity of etching process. 1 tbl