FIELD: microelectronics.
SUBSTANCE: proposed device belonging to class of field-effect semiconductor devices and integrated circuits, such as field-effect transistors, MIS varactors, infrared MIS photodetectors, and charge-coupled devices is built around indium antimonide and has semiconductor-insulator section. Insulator is made of material in which two-dimensional lattice discrepancy does not exceed 12% of constant two-dimensional indium antimonide lattice.
EFFECT: improved electrophysical parameters of device.
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