FIELD: microelectronics.
SUBSTANCE: proposed method that may be found useful in manufacturing MIS devices including multicomponent receivers built around type A3B5 narrow-band semiconductors involves positive voltage supply to wafer being oxidized. Prior to supplying voltage to wafer halogen radicals are generated in immediate proximity of the latter by feeding negative voltage of 3 - 10 V to wafer or to additionally entered radical. Wafer is held at this negative voltage for 5 - 60 s whereupon polarity is reversed. Negative voltage is supplied to additionally introduced electrode throughout entire oxidation process and this electrode is spaced 5 - 10 mm from wafer.
EFFECT: enhanced oxidation quality.
3 cl
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