METHOD FOR FORMATION OF SEMICONDUCTOR DEVICE ALLOYED AREAS Russian patent published in 2013 - IPC H01L21/268 

FIELD: electrical engineering.

SUBSTANCE: in the method for formation of a semiconductor device alloyed areas, for creation of the semiconductor device alloyed working areas, one applies onto a formed substrate film with an alloying mixture and proceeds with laser ray treatment with pulse duration equal to 35 ns, radiation wavelength - to 308 nm and pulse energy density - to 200-500 mJ/cm².

EFFECT: reduced defect density in the semiconductor structures to provide manufacturability, to improve parameters, to increase reliability and serviceable devices percentage yield.

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