NON-INJECTION LIGHT-EMITTING DIODE Russian patent published in 1994 - IPC

Abstract RU 2019895 C1

FIELD: electro-optics. SUBSTANCE: non-injection light-emitting diode made on the base of second-type heterojunction has additional heterojunction with the same type. The first diode is disposed symmetrically to the second one. Potential well is formed between the diodes. Non-injection light-emitting diode may be made of n-GaSb or p-GaSb; thickness of InAs layer is equal to 5-15 angstroms. EFFECT: improved efficiency. 2 cl, 1 dwg

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RU 2 019 895 C1

Authors

Кop'Ev Р.S.

Ledentsov N.N.

Мonakhov А.М.

Rogachev А.А.

Dates

1994-09-15—Published

1991-04-18—Filed