PHOTORESISTOR STRIP MANUFACTURING PROCESS Russian patent published in 1994 - IPC

FIELD: optoelectronics. SUBSTANCE: PbS base photodetectors are formed on substrate with active photoresistor regions having isolated photosensitive elements by photographing and etching metal interconnection for components using electrochemical deposition method. Interconnection is made upon forming active photoresistor regions by mask etching of metal-seniconductor system also protecting active regions. Upon interconnection metal deposition low-melting metal is deposited in addition by electrochemical method around contact pads. Electrochemical deposition is also made when irradiating semiconductor layer by rays having wavelength of 0.4 to 2.6 microns and energy density of (1-100)·10^-3 W/cm². Nickel is used for interconnection. EFFECT: facilitated procedure. 3 cl, 7 dwg