METHOD OF MAKING MULTI-STAGE SOLAR CELLS BASED ON Galnp/Galnas/Ge SEMICONDUCTOR STRUCTURE Russian patent published in 2014 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making multi-stage solar cells includes successive deposition, on the front surface of a photosensitive GaInP/GaInAs/Ge semiconductor structure, of a passivation layer and a GaAs contact layer, local removal of the contact layer by etching through a photoresist mask; forming a multilayer antireflection coating on the open part of the passivation layer; sputtering an ohmic contact base on the surface of strips of the contact layer through the photoresist mask and on the back surface of the photosensitive semiconductor structure; after firing the sputtered ohmic contact base, thicking said base via pulsed electrochemical deposition of a layer of gold or silver with thickness of 5-10 mcm on the strips of the ohmic contact base through a hardened photoresist mask with vertical side walls and on the ohmic contact base on the back surface of the photosensitive semiconductor structure; forming a separation mesa by plasma-chemical etching of the photosensitive semiconductor structure on the side of the front surface at a depth of 10-15 mcm through the hardened photoresist mask; depositing a protective layer of heat-resistant and chemical-resistant dielectric on the side surface of the separation mesa.

EFFECT: making solar cells with minimal shading of the photosensitive region, with thick ohmic contacts, having high electroconductivity and high wear resistance.

8 cl, 4 dwg, 8 ex